更新時(shí)間：2025-04-24
雙色探測(cè)器每個(gè)探測(cè)器都有不同的光譜響應(yīng)率，裝在一個(gè)類似三明治結(jié)構(gòu)的裝置里。這樣的幾何結(jié)構(gòu)，頂部不僅有正常工作特性的探測(cè)器，還可作為一個(gè)長波帶通濾光片通過底部的探測(cè)器。所涉及的材料有：硅和硅、銦鎵砷和銦鎵砷、紫外硅和銦鎵砷、硅和銦鎵砷、紫外硅和擴(kuò)展型銦鎵砷（有制冷型）、硅和鍺、紫外硅和鍺、硅和砷化銦、紫外硅和砷化銦、硅和硫化鉛（有制冷型）、紫外硅和硫化鉛（有制冷型）、硅和硒化鉛、紫外硅和硒化鉛。
雙色探測(cè)器簡介
每個(gè)探測(cè)器都有不同的光譜響應(yīng)率，裝在一個(gè)類似三明治結(jié)構(gòu)的裝置里。這樣的幾何結(jié)構(gòu)，頂部不僅有正常工作特性的探測(cè)器，還可作為一個(gè)長波帶通濾光片通過底部的探測(cè)器。所涉及的材料有：硅和硅、銦鎵砷和銦鎵砷、紫外硅和銦鎵砷、硅和銦鎵砷、紫外硅和擴(kuò)展型銦鎵砷(有制冷型)、硅和鍺、紫外硅和鍺、硅和砷化銦、紫外硅和砷化銦、硅和硫化鉛（有制冷型）、紫外硅和硫化鉛（有制冷型）、硅和硒化鉛、紫外硅和硒化鉛。
產(chǎn)品包括室溫雙色、一級(jí)制冷雙色、二級(jí)制冷雙色
室溫雙色探測(cè)器室溫參數(shù)
| type | Active Dia.(mm) | OperatingWavelength (um) | Shunt Resistanve (Ω) typ | Shunt Capacitance (pF),tpy | NEP
| Responsivity @850nm (A/W) |
| LD-S / S -025 | Si 2.5 | 0.3-1.0 | 200M min,500M | 600 | <10-14@850nm | 0.5@850nm |
| Si 2.5 | 1.0-1.1 | 2G min,5G | 500 | <10-14@1050nm | 0.1@1050nm | |
| LD-IGA/ IGA-020 | InGaAs 2.0 | 0.9-1.7 | 10M min@0V | 500 | <5 x 10-14@1.3nm | 0.9@1300nm |
| InGaAs 2.0 | 1.7 | 10M min@0V | 500 | <1x10-12@1.75nm | 0.05@1.75nm | |
| LD-S/IGA-025/020 | Si 2.5 | 0.3-1.0 | 500M min@0V | 200 | <1x10-14@850nm | 0.6@850nm |
| InGaAs 2.0 | 1.0-1.7 | 10M min@0V | 400 | <1x10-13@1300nm | 0.6@1300nm | |
| LD-UVS/IGA-025/010 | Si 2.5 | 0.2-1.0 | 200M min@0V | 300 | <1.5x10-14@850nm | 0.6@850nm |
| InGaAs 1.0 | 1.0-1.7 | 200M min@0V | 90 | <1.5x10-14@1300nm | 0.6@1300nm | |
| LD-UVS/IGA-025/020 | UVS 2.5 | 0.2-1.0 | 200M min@0V | 300 | <1.5x10-14@850nm | 0.6@850nm |
| InGaAs 2.0 | 1.0-1.7 | 10M min@0V | 400 | <1x10-13@1300nm | 0.6@1300nm | |
| LD-S/IGA-050/030 | Si 5 | 0.3-1.0 | 200M | 1500 | <1.5x10-14 | 0.5@900nm |
| InGaAs 3 | 1.0-1.7 | 5M | 1000 | <1.5x10-13 | 0.6@1300nm | |
| LD-UVS/IGA-050/030 | Si 5 | 0.2-1.0 | 50M | 1000 | <3.0x10-14 | 0.5@900nm |
| InGaAs 3 | 1.0-1.7 | 5M | 1000 | <1.5x10-13 | 0.6@1300nm | |
| LD-S/IGA2.2-025/010 | Si 2.5 | 0.3-1.0 | 500Mmin,0V | 400 | <1x10-14@850nm | 0.55@850nm |
| Ex-InGaAs 1.0 | 1.2-2.6 | >3k | 300 | <1x10-11@2200nm | 0.50@2200nm | |
| LD-UVS/IGA2.2-025/010 | UV Si 2.5 | 0.2-1.0 | 200M min@0V | 300 | <1.5x10-14@850nm | 0.50@850nm |
| Ex-InGaAs 1.0 | 1.2-2.6 | >3k | 300 | <1x10-11@2200nm | 0.50@2200nm | |
| LD-S/G-025/020 | Si 2.5 | 0.3-1.0 | 500M min@0V | 400 | <1x10-14@850nm | 0.55@850nm |
| Ge 2.0 | 1.0-1.7 | 90k min@0V | 9000 | <7x10-13@1500nm | 0.6@1500nm | |
| LD-UVS/G-025/020 | UVS 2.5 | 0.2-1.0 | 200M min@0V | 300 | <1.5x10-14@850nm | 0.5@850nm |
| Ge 2.0 | 1.0-1.7 | 90k min@0V | 900 | <7x10-13@1500nm | 0.6@1500nm | |
| LD-S/G-050 | Si 5 | 0.3-1.0 | 200M | 1500 | <1.5x10-14 | 0.5@900nm |
| Ge 5 | 1.0-1.8 | 5k | 30000 | <2.5x10-12 | 0.6@1500nm | |
| LD-UVS/G-050 | UVSi 5 | 0.2-1.0 | 50M | 1000 | <3.0x10-14 | 0.5@900nm |
| Ge 3 | 1.0-1.8 | 15k | 30000 | <2.5x10-12 | 0.6@1500nm | |
| LD-S/IA-025/020 | Si 2.5 | 0.3-1.0 | 500Mmin,0V | 400 | <1x10-14@850nm | 0.55@850nm |
| InAs 2.0 | 1.0-3.4 | >10 | 1200 | <1x10-10@3200nm | 0.50@3200nm | |
| LD-UVS/IA-025/020 | UV Si 2.5 | 0.2-1.0 | 200M min@0V | 300 | <1.5x10-14@850nm | 0.50@850nm |
| InAs 2.0 | 1.0-3.4 | >10 | 1200 | <1x10-10@3200nm | 0.50@3200nm | |
| LD-S/PBS-025 /020 | Si 2.5 | 0.3-1.0 | 500M min@0V | 400 | <1x10-14@850nm | 0.55A/W@850nm |
| PBS 2.0 | 1.0-2.8 | 0.5-2.0M |
| <4x10-12@2600nm | 105V/W@1500nm | |
| LD-UVS/PBS-025/020 | UVS 2.5 | 0.2-1.0 | 200M min@0V | 300 | <1.5x10-14@850nm | 0.50A/W@850nm |
| PBS 2.0 | 1.0-1.8 | 0.5-2.0M |
| <4x10-12@2600nm | 105V/W@2600nm | |
| LD-S/PBS-025 /020 | Si 2.5 | 0.3-1.0 | 500Mmin@0V | 400 | <1x10-14@850nm | 0.55A/W@850nm |
| PBS 2.0 | 1.0-2.8 | 0.5-2.0M |
| <4x10-12@2600nm | 105V/W@1500nm | |
| LD-UVS/PBS-025/020 | UVS 2.5 | 0.2-1.0 | 200M min@0V | 300 | <1.5x10-14@850nm | 0.50A/W@850nm |
| PBS 2.0 | 1.0-1.8 | 0.5-2.0M |
| <4x10-12@2600nm | 105V/W@2600nm | |
| LD-S/PBSE-025/020 | Si 2.5 | 0.3-1.0 | 500Mmin@0V | 400 | <1x10-14@850nm | 0.55@850nm |
| PbSe 2.0 | 1.0-4.5 | 0.3-1.0M |
| <7x10-11@4200nm | >2000V/W@4200nm | |
| LD-UVS/PBSE-025/020 | UV Si 2.5 | 0.2-1.0 | 200Mmin@0V | 300 | <1.5x10-14@850nm | 0.50A/W@850nm |
| PbSe 2.0 | 1.0-4.5 | 0.3-1.0M |
| <7x10-11@4200nm | >2000V/W@4200nm | |
| LD-S/PBSE-050 | Si 5 | 0.3-1.0 | 200Mmin@0V | 1500 | <1.5x10-14 | 0.55A/W@900nm |
| PbSe 5 | 1.0-4.5 | 0.2-1.0M |
| <5x10-10@4200nm | >500V/W@4200nm | |
| LD-UVS/PBSE-050 | UVS 5 | 0.2-1.0 | 50M | 1000 | <3.0x10-14 | 0.55A/W@800nm |
| PbSe 5 | 1.0-4.5 | 0.2-1.0M |
| <5x10-10@4200nm | 500V/W@4200nm | |
|
LD-S/IGA-010/010 | Si 1.5*2 | 0.3-1.0 | 200/500 | 200 | <1.0x10-14@850nm | 0.60@850nm |
| InGaAs 1.0 | 1.0-1.7 | 100/200 | 100 | <1.0x10-14@1300nm | 0.90@1300nm | |
|
LD-S/IGA-025/010
| Si 2.5 | 0.3-1.0 | 500Mmin@0V | 200 | <1.0x10-14@850nm | 0.60@850nm |
| InGaAs 1.0 | 1.0-1.7 | 100Mmin@0V | 100 | <2x10-14@1300nm | 0.60@1300nm | |
|
LD-S/IGA-025/030
| Si 2.5 | 0.3-1.0 | 500Mmin@0V | 200typ | <1.0x10-14@850nm | 0.60@850nm |
| InGaAs 3.0 | 1.0-1.7 | 5Mmin@0V | 400typ | <2x10-14@1300nm | 0.60@1300nm | |
|
LD-UVS/IGA-050/050 | UVSi 5.0 | 0.2-1.0 | 50M | 1000typ | <3.0x10-14 | 0.50@900nm |
| InGaAs 5.0 | 1.0-1.7 | 0.5M | 1500typ | <2.0x10-14 | 0.60@1300nm | |
|
LD-UVS/G-050/030 | UVSi 5.0 | 0.20-1.0 | 50M | 1000typ | <3.0x10-14 | 0.50@900nm |
| Ge 3.0 | 1.0-1.8 | 40K | 4000typ | <1.0x10-12 | 0.60@1500nm | |
|
LD-UVS/G-100 | UVSi 10 | 0.20-1.0 | 50M min,100M typ | 1000typ | <3.0x10-14 | 0.50@900nm |
| Ge 10*10 | 1.0-1.8 | 2k min,4k typ | 40000typ | <6.0x10-12 | 0.60@1500nm | |
|
LD-S/PBS-100 | UVSi 10 | 0.3-1.0 | 200M | 1500 | <1.5x10-14 | 0.55@900nm |
| PBS 10*10 | 1.0-2.8 | 0.2-1.0M | N/A | <1.5x10-11@2600nm | 20000V/W@2600nm | |
|
LD-UVS/PBS-050 | UVSi 5 | 0.2-1.0 | 50M | 1000 | <3.0x10-14 | 0.55@800nm |
| PBS 5*5 | 1.0-2.8 | 0.2-1.0M | N/A | <1.5x10-11@2600nm | 20000V/W@2600nm |
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